symbol v ds v gs i dm i ar e ar t j , t stg parameter symbol typ max t 10s 18 25 steady state 50 60 steady state r q jc 1 2 power dissipation b t c =25c 45 304 75 37 continuous drain current g parameter t c =25c t c =100c gate-source voltage drain-source voltage units absolute maximum ratings t a =25c unless otherwise noted 25 c/w w repetitive avalanche energy l=0.3mh c mj p d t c =100c maximum junction-to-case b w junction and storage temperature range -55 to 175 v 20 v avalanche current c i d pulsed drain current c a 165 60 47 t a =25c p dsm t a =70c 2.0 1.3 maximum thermal characteristics units maximum junction-to-ambient a r q ja c/w maximum junction-to-ambient a c/w c power dissipation a AOD4128 v ds (v) = 25v i d = 60 a (v gs = 10v) r ds(on) < 4 m w (v gs = 10v) r ds(on) < 7 m w (v gs = 4.5v) the AOD4128 uses advanced trench technology to prov ide excellent r ds(on) , low gate charge and low gate resistance. this device is ideally suited for use as a low side switch in cpu core power conversion. the device can also be u sed in pwm, load switching and general purpose applicat ions. g d s www.freescale.net.cn 1/6 n-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss 25 v 1 t j =55c 5 i gss 100 na v gs(th) 1.3 1.6 2.5 v i d(on) 165 a 3.4 4 t j =125c 5.0 6 5.8 7 m w g fs 55 s v sd 0.7 1 v i s 60 a c iss 3578 4300 pf c oss 731 950 pf c rss 438 615 pf r g 2.5 4 w q g (10v) 61.8 80 nc q g (4.5v) 29.8 39 nc q gs 8.5 nc q gd 12.9 nc t d(on) 11.6 ns t r 17.7 ns t d(off) 45 ns t f 20 ns t rr 39 48 ns q rr 32 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s v gs =0v, v ds =12.5v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ua gate threshold voltage v ds =v gs , i d =250 m a v ds =25v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =20a i s =1a, v gs =0v v ds =5v, i d =20a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =12.5v, i d =20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=100a/ m s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =12.5v, r l =0.63 w , r gen =3 w a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). re1: sep. 2008 www.freescale.net.cn 2/6
t c =100c t a =25c -55 to 175 typical electrical and thermal characteristics 2 4 6 8 10 12 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) -40c 0 15 30 45 60 75 90 105 120 135 150 165 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 10v 4v 5v 3.5v 4.5v 0 10 20 30 40 50 60 0 1 2 3 4 v gs (volts) figure 2: transfer characteristics i d (a) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =10v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v 25c 125c v ds =5v v gs =4.5v i d =20a 25c 125c i d =20a -40c v gs =10v -40c www.freescale.net.cn 3/6
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 100 200 300 400 500 1e-05 1e-04 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) c oss c rss 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10us 100us dc r ds(on) limited t j(max) =175c t c =25c 10ms 1ms v ds =12.5v i d =20a t j(max) =175c t c =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2c/w in descending order d=0.5, 0.3, 0.1, 0.05, single pulse single pulse t on t p d www.freescale.net.cn 4/6
typical electrical and thermal characteristics 0 50 100 150 200 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 100 200 300 400 500 1e-05 1e-04 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.0001 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse www.freescale.net.cn 5/6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar www.freescale.net.cn 6/6
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